Micron RAM Module - 4 GB (1 x 4GB) - DDR4-2133/PC4-17000 DDR4 SDRAM - 2133 MHz Single-rank Memory - CL15 - 1.20 V - ECC - Registered - 288-pin - DIMM - MTA9ASF51272PZ-2G1

Product Description

Micron RAM Module - 4 GB (1 x 4GB) - DDR4-2133/PC4-17000 DDR4 SDRAM - 2133 MHz Single-rank Memory - CL15 - 1.20 V - ECC - Registered - 288-pin - DIMM - MTA9ASF51272PZ-2G1

• Up to 2133 MHz speed with CL15 latency for playing the latest games and using heavy software
• Up to 2133 MHz speed with registered signal for smooth computer performance
• 4 GB memory allows you to have more programs open at a time
• 4 GB of memory to refine your computer's performance
• Allow convenient and fast access to the stored information your computer is actively using for maximum efficiency
• Enables efficient and smooth execution of all your heavy-duty applications with maximum productivity
• Registered signal processing allows high speed and accuracy to allow maximum reliability
• Registered signal processing allows convenient and easy reconfiguration according to your requirements
• 1 x 4GB modules for dependable storage efficiency and maximum convenience
• 1 x 4GB modules for quick access and retrieval of data and information to ensure maximum usability
• CL15 CAS latency for quicker access to the required location in a timely efficient manner
• 288-pin for enhanced, dependable system performance with maximum usability
• 288-pin for optimal performance and maximum reliability
• DIMM form factor with 288-pin and 4 GB memory size for enhanced performance and speed to allow maximum usability
• DIMM form factor with 288-pin and 4 GB memory size effectively lessens the electrical load on the memory controller to allow maximum feasibility
• 288-pin DDR4-2133/PC4-17000 interface multiplexes 2-bit data from memory cell and I/O buses to minimize processor idle time and enhance your computer's performance
• 288-pin DDR4 SDRAM operates at an effective bus speed with minimal power consumption and as a result, you get optimal computer performance with an improved memory heat dissipation