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Product Description
Kioxia 8G(4G×2) Benand (Built-In ECC SLCNAND) - TH58BYG3S0HBAI4
A 1-bit per cell, non-volatile memory, KIOXIA SLC (single-level cell) NAND flash memory writes large amounts of data at high speed; provides high write/erase cycle endurance; offers support for a wide range of operating temperatures and provides high reliability. Additionally, when compared to NOR flash memory, significant cost-savings can be realized for higher density devices. Thanks to these attributes, SLC NAND flash memory is adopted in a wide range of consumer and industrial applications.
Key Features of KIOXIA RAW SLC NAND Flash Memory
- 24nm Process Technology
- High performance & reliability
- Industrial-temperature availability
- Support both 3V and 1.8V VCC Options
- BGApackage (6.5 x 8 mm / 9 x 11 mm) / TSOP (12 x 20 mm)
- Ability to read and write data at high speeds
- Support for high-write/erase cycle endurance
Other Details
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Custom Field
MPN TH58BYG3S0HBAI4
Capacity (bit) 8G(4G×2)
Tech. node (nm) 24
Page size (bit) (4096+128)×8
Block size (bit) (256K+8K)×8
I/O (bit) 8
Keyword 8Gbit BENAND, 3.3V, x8, 24nm, FBGA
Note Images may not be exact, please check specifications.
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