Micron RAM Module - 4 GB (1 x 4GB) - DDR3-1333/PC3-10600 DDR3 SDRAM - 1333 MHz Dual-rank Memory - CL9 - 1.50 V - Non-ECC - Unbuffered - 240-pin - DIMM - MT16JTF51264AZ-1G4

Product Description

Micron RAM Module - 4 GB (1 x 4GB) - DDR3-1333/PC3-10600 DDR3 SDRAM - 1333 MHz Dual-rank Memory - CL9 - 1.50 V - Non-ECC - Unbuffered - 240-pin - DIMM - MT16JTF51264AZ-1G4

• No matter how heavy and numerous the applications that you are using, 1333 MHz memory speed with unbuffered signal and CL9 latency will run them smoothly
• Up to 1333 MHz speed for playing the latest games and using heavy software
• DIMM 4 GB memory allows you to have more programs open at a time
• DIMM 4 GB memory smoothly executes complex apps and games
• DDR3-1333/PC3-10600 interface multiplexes 2-bit data from memory cell and I/O buses to minimize processor idle time and enhance your computer's performance
• 240-pin-pin DDR3 SDRAM interface synchronizes electrical and clock signals for an efficient data transfer rate
• Allow convenient and fast access to the stored information your computer is actively using for maximum efficiency
• Unbuffered signal processing allows higher accuracy and enhanced ram module performance
• Unbuffered signal processing provides reliable optimization for your required applications to allow maximum usability
• 1 x 4GB modules for dependable storage efficiency and maximum convenience
• 1 x 4GB modules for quick access and retrieval of data and information to ensure maximum usability
• CL9 CAS latency for faster, dependable clock cycles which allows quick access and retrieval of data and information
• CL9 CAS latency for reliable, fast response and improved performance
• 240-pin for faster, dependable performance and better access to data and information
• 240-pin for optimal performance and maximum reliability
• DIMM form factor with 240-pin and 4 GB memory size for enhanced performance and speed to allow maximum usability
• DIMM form factor with 240-pin and 4 GB memory size effectively lessens the electrical load on the memory controller to allow maximum feasibility