Micron RAM Module - 8 GB (1 x 8GB) - DDR3-1333/PC3L-10600 DDR3 SDRAM - 1333 MHz Dual-rank Memory - CL9 - 1.35 V - ECC - Registered - 240-pin - DIMM - MT36KSF1G72PZ-1G4

Product Description

Micron RAM Module - 8 GB (1 x 8GB) - DDR3-1333/PC3L-10600 DDR3 SDRAM - 1333 MHz Dual-rank Memory - CL9 - 1.35 V - ECC - Registered - 240-pin - DIMM - MT36KSF1G72PZ-1G4

• Up to 1333 MHz speed for smooth computer performance
• Up to 1333 MHz speed with registered signal and CL9 latency for playing the latest games and using heavy software
• 8 GB memory allows you to have more programs open at a time
• 8 GB of memory makes a perfect symmetry with your latest model processor and boosts up your computer's performance
• DDR3-1333/PC3L-10600 interface synchronizes electrical and clock signals for an efficient data transfer rate
• DDR3 SDRAM operates at an effective bus speed with minimal power consumption and as a result, you get optimal computer performance with an improved memory heat dissipation
• Allow convenient and fast access to the stored information your computer is actively using for maximum efficiency
• Enables efficient and smooth execution of all your heavy-duty applications with maximum productivity
• Registered signal processing provides increased processing power to allow maximum productivity
• Registered signal processing allows high speed and accuracy to allow maximum reliability
• 1 x 8GB modules for dependable storage efficiency and maximum convenience
• 1 x 8GB modules for enhanced memory reliability and productivity
• CL9 CAS latency for faster, dependable clock cycles which allows quick access and retrieval of data and information
• CL9 CAS latency for quicker access to the required location in a timely efficient manner
• 240-pin for enhanced, dependable system performance with maximum usability
• 240-pin for optimal performance and maximum reliability
• DIMM form factor with 240-pin and 8 GB memory size for enhanced performance and speed to allow maximum usability
• DIMM form factor with 240-pin and 8 GB memory size effectively lessens the electrical load on the memory controller to allow maximum feasibility