Samsung 4GB PC3-12800 DDR3-1600MHz non-ECC Unbuffered CL11 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module - M471B5273DH0-YK0

Product Description

Samsung 4GB PC3-12800 DDR3-1600MHz non-ECC Unbuffered CL11 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module - M471B5273DH0-YK0

Upgrade your computer's speed and efficiency with the Samsung 4GB PC3-12800 DDR3-1600MHz non-ECC Unbuffered CL11 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module (M471B5273DH0-YK0). This high-performance memory module is designed to enhance multitasking capabilities, improve responsiveness, and provide a seamless computing experience for demanding applications.

Experience the Difference:

• Faster Speeds: With a 1600MHz clock speed, this DDR3 memory significantly improves data transfer rates, reducing lag and boosting overall system performance.
• Seamless Multitasking: Run multiple programs simultaneously without experiencing slowdowns or freezes. This 4GB module provides ample capacity for demanding tasks, from video editing to gaming.
• Energy Efficiency: The low 1.35V voltage requirement reduces power consumption, leading to lower energy bills and extended battery life for laptops.
• Reliable Performance: Samsung's renowned quality and reliability ensure stable and consistent performance, maximizing your system's uptime.
• Easy Installation: The 204-pin SoDimm form factor allows for quick and easy installation in compatible laptops and small form factor PCs.

Features:

• 4GB Capacity
• DDR3 Technology
• 1600MHz Speed
• PC3-12800
• Non-ECC Unbuffered
• CL11 Latency
• 204-Pin SoDimm
• 1.35V Low Voltage
• Dual Rank