Samsung 8 GB DDR4‑2666 MHz ECC SODIMM (Single‑Rank x8, 260‑Pin, 1.2 V) – M474A1K43BB1‑CTD‑DNA

Product Description

Samsung 8 GB DDR4‑2666 MHz ECC SODIMM (Single‑Rank x8, 260‑Pin, 1.2 V) – M474A1K43BB1‑CTD‑DNA

Enhance the reliability and performance of your critical server applications with the Samsung 8GB DDR4-2666MHz ECC SODIMM (M474A1K43BB1-CTD-DNA). This memory module is engineered to deliver exceptional stability and speed, ensuring seamless operation for demanding workloads.

Benefits of Choosing Samsung DDR4 ECC SODIMM:

• Enhanced Data Integrity: Error Correcting Code (ECC) technology detects and corrects single-bit memory errors, safeguarding your valuable data and preventing system crashes.
• Increased Performance: With a speed of 2666MHz, this module provides fast data transfer rates, minimizing latency and maximizing system responsiveness.
• Improved Stability: Built with high-quality components and rigorous testing, this SODIMM guarantees reliable operation, even under heavy load.
• Energy Efficiency: Operating at a low 1.2V, this module helps reduce power consumption and lower operating costs.
• Ideal for Demanding Applications: Perfect for servers, workstations, and other mission-critical systems requiring high availability and data integrity.

Features:

• Capacity: 8GB
• Type: DDR4
• Speed: 2666MHz
• ECC: Yes
• Ranking: Single-Rank x8
• Pins: 260-Pin
• Voltage: 1.2V