Toshiba 650V 3rd Generation SiC MOSFETs In Surface-Mount TOLL Package - TW083U65C

Toshiba 650V 3rd Generation SiC MOSFETs In Surface-Mount TOLL Package -TW083U65C

Experience unparalleled efficiency and performance in your power electronics designs with the Toshiba TW083U65C, a cutting-edge 650V Silicon Carbide (SiC) MOSFET. This 3rd generation device leverages Toshiba's advanced technology to deliver superior switching characteristics and reduced losses, making it ideal for a wide range of demanding applications.

Housed in a surface-mount TOLL (TO-Leadless) package, the TW083U65C offers excellent thermal performance and minimizes board space, enabling compact and efficient designs. Its robust construction ensures reliability and longevity, even under harsh operating conditions.

The new products are Toshiba’s 3rd generation SiC MOSFETs in a general-purpose surface-mount TOLL package, which reduces device volume by more than 80% compared to through-hole packages such as TO-247 and TO-247-4L(X), and improves equipment power density.

The TOLL package also offers lower parasitic impedance than through-hole packages, which helps to reduce switching losses. As a 4-terminal package, a Kelvin connection can be used as the signal source terminal for the gate drive. This reduces the influence of inductance in the source wire within the package, achieving high-speed switching performance;

The TW048U65C is housed in a surface-mount TOLL (TO-Leadless) package, providing excellent thermal performance and enabling compact designs. It's ideally suited for applications such as:

• Switched-mode power supplies in servers, data centers, communications equipment, etc.
• EV charging stations
• Photovoltaic inverters
• Uninterruptible power supplies

Key Features

(1) Chip design of 3rd generation (Built-in SiC schottky barrier diode)
(2) Low diode forward voltage: VDSF = -1.35 V (typ.)
(3) High voltage: VDSS = 650 V
(4) Low drain-source on-resistance: RDS(ON) = 83 m
Ω (typ.)
(5) Less susceptible to malfunction due to high threshold voltage: Vth = 3.0 to 5.0 V (VDS = 10 V, I
D = 0.6 mA)
(6) Recommended gate - source drive voltage: VGS_on = 18 V, VGS_off = 0 V
(7) Enhancement mode

Absolute Maximum Ratings

Electrical Characteristics

DATA SHEET