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Product Description
Toshiba MOSFETs Silicon N-Channel MOS (DTMOSⅥ) Switching Voltage Regulators - TK080Z60Z1
Wide band gap power semiconductors leverage the benefits of Toshiba’s second-generation SiC (silicon carbide) device structure to achieve attractive benefits for high voltage products. Toshiba’s SiC MOSFETs offer improved reliability, superior operation in high-temperature environments, high-speed switching and low on-resistance characteristics compared to conventional Si (silicon) power semiconductors. SiC MOSFETs are suitable for a variety of high-power, high-efficiency applications including industrial power supplies, solar inverters, and UPS.
DTMOSⅥ 600V N-Channel Power MOSFET in TO-247-4L(X) Package Helps Improve Efficiency of Switched-Mode Power Supplies for Industrial Equipment.
3rd generation Silicon Carbide(SiC) MOSFETs
Toshiba's 3rd generation Silicon Carbide (SiC) MOSFETs introduces a selection of both 650V and 1200V voltage products. In common with 2nd generations, Toshiba's newest generation of MOSFETs include a built-in SiC Schottky Barrier Diode (SBD) with a low forward voltage (VF) of -1.35V (typ.), placed in parallel with the PN diode in the SiC MOSFETs, to suppress fluctuation in RDS(on) thereby enhancing reliability. Furthermore, Toshiba’s advanced SiC process has greatly improved our on-resistance per unit area RonA, and the performance index Ron Qgd, which indicates switching characteristics, compared to 2nd generation products. Also, it has easy to design gate drive circuit, and you can prevent malfunctions due to switching noise.
Toshiba's 3rd generation SiC MOSFETs provides lower power consumption and supports higher power density for applications such as switching power supplies (servers for data centers, communication equipment, etc.), uninterruptible power supplies (UPS), PV inverters, EV charging stations, etc.
Toshiba's 3rd generation SiC MOSFETs provides lower power consumption and supports higher power density for applications such as switching power supplies (servers for data centers, communication equipment, etc.), uninterruptible power supplies (UPS), PV inverters, EV charging stations, etc.
Features
(1) Low drain-source on-resistance: RDS(ON) = 0.067
Ω (typ.)
(2) High-speed switching properties with the lower capacitance.
(3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, I
D = 1.17 mA)
Ω (typ.)
(2) High-speed switching properties with the lower capacitance.
(3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, I
D = 1.17 mA)
Description
| Application Scope | Switching Voltage Regulators |
|---|---|
| Polarity | N-ch |
| Generation | DTMOSⅥ |
| Internal Connection | Single |
| RoHS Compatible Product(s) (#) | Available |
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source voltage | VDSS | 600 | V |
| Gate-Source voltage | VGSS | +/-30 | V |
| Drain current | ID | 25 | A |
| Power Dissipation | PD | 176 | W |
Electrical Characteristics
| Characteristics | Symbol | Condition | Value | Unit |
|---|---|---|---|---|
| Gate threshold voltage (Max) | Vth | - | 4.0 | V |
| Gate threshold voltage (Min) | Vth | - | 3.0 | V |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=10V | 99 | mΩ |
| Input capacitance (Typ.) | Ciss | - | 2050 | pF |
| Total gate charge (Typ.) | Qg | VGS=10V | 36 | nC |
DATA SHEETOther Details
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Custom Field
MPN TK080Z60Z1
Toshiba Package Name TO-247-4L(X)
Pins 4
Mounting Through Hole
Width×Length×Height (mm) 15.94×23.45×5.02
Package Dimensions View
NOTE Images may not be exact, please check specifications.
Required A Volume Purchase Contact us for a volume pricing |volumeorders@hssl.us
