Toshiba Zener Diode Silicon Epitaxial Planar XCEZ Series For Overvoltage protection of ECU For Automotive - XCEZ6V2

 

The Toshiba XCEZ6V2 is a silicon epitaxial planar Zener diode designed specifically for overvoltage protection in automotive electronic control units (ECUs). Engineered to withstand the demanding conditions of automotive applications, this diode provides reliable and robust protection against voltage surges and transients, ensuring the longevity and performance of your critical ECU components.

Superior Clamping Performance: The XCEZ6V2 offers superior clamping performance, minimizing voltage overshoot and providing enhanced protection against damaging voltage spikes. Its robust design ensures reliable operation even in harsh automotive environments.

Designed for optimal overvoltage protection, the Toshiba XCEZ6V2 Zener diode is an essential component for safeguarding your automotive ECU. Its compact size and high performance make it an ideal solution for demanding automotive applications.

Small, highly compatible general-purpose package

In the XCEZ series, Toshiba has adopted the highly compatible and small SOD-523 package (1.6×0.8mm), which reduces the mounting area by approximately 59% compared to the SOD-323 package (2.5×1.25mm) used in Toshiba’s existing XCUZ series. This contributes to the miniaturization of circuit boards.

Low dynamic resistance

As a protective device, dynamic resistance is an important factor in absorbing surge voltages that enter from power lines, connectors, etc. A low dynamic resistance allows surge current to flow more easily to the Zener diode. Toshiba's proprietary Zener process provides a steep slope in I_TLP-V_TLP curve at the reverse-voltage (V_R) end, achieving a lower dynamic resistance. This enables high absorption of surge voltage to prevent damage and malfunction of the system and enhances protection of devices and circuits. 

Surge protection for long pulse durations in the millisecond range.

The new products achieve a high maximum allowable Zener surge power of 6W with a 10ms pulse width, enabling protection of semiconductor devices against long pulse width conditions in the millisecond range, such as high switching surges and overvoltages close to DC.

Absolute Maximum Ratings