Toshiba Zener Diodes Surge Protection Of Power Lines - CMZB13A

The CMZB13A offers exceptional clamping performance, quickly diverting excess voltage away from vulnerable components. Its fast response time ensures minimal disruption to normal circuit operation during surge events. This diode is ideal for use in power supplies, communication equipment, industrial control systems, and other applications where surge protection is critical.

The Toshiba CMZB13A Zener Diode provides superior surge protection that can help prevent costly downtime and equipment failures. Implementing surge protection can significantly improve the reliability and lifespan of your electronic devices.

Key Features 

Surge Protection From Switching Surges and Overvoltage Pulses with Long Pulse Width And Characteristics Close to DC.

The new products feature protection not only against transient overvoltage pulses, but also against overvoltage pulses with long pulse width and characteristics close to DC, which are difficult for ESD protection diodes to handle. In power lines of equipment, switching surges with long pulse widths of up to milliseconds may be generated when the circuit switches. The new products help protect semiconductor devices from switching surges and overvoltage close to DC.

Zener Voltage For Major Power Lines: V_Z (typ.)=12V to 51V

With a wide lineup of Zener voltages ranging from 12V to 51V, the lineup supports a variety of applications, including consumer and industrial equipment.

Specification Range of High-Precision Zener Voltage: ±5% (typ.)

With a planar structure enabling fine-tuning of the process, the new products improve the Zener voltage specification range of Zener voltage (typ.) from ±10% to ±5% compared to the existing CMZBxx series. This allows for design within a narrower voltage range, making it easier to select components and adjust circuit constants, thereby contributing to simplified equipment design.

Low Reverse Current: I_R (max)=0.5μA

Since Zener diodes are typically connected to power lines continuously, lower reverse current helps lower power consumption during standby. By protecting the PN junction with an oxide film through a planar structure, the CMZBxxA series achieves a low reverse current of 0.5μA (max), compared to 10μA for the existing CMZBxx series. This contributes to low power consumption in equipment.

DATA SHEET