Micron RAM Module - 8 GB (1 x 8GB) - DDR4-2133/PC4-17000 DDR4 SDRAM - 2133 MHz Dual-rank Memory - CL15 - 1.20 V - Non-ECC - Unbuffered - 288-pin - DIMM - MTA16ATF1G64AZ-2G1

Product Description

Micron RAM Module - 8 GB (1 x 8GB) - DDR4-2133/PC4-17000 DDR4 SDRAM - 2133 MHz Dual-rank Memory - CL15 - 1.20 V - Non-ECC - Unbuffered - 288-pin - DIMM - MTA16ATF1G64AZ-2G1

• No matter how heavy and numerous the applications that you are using, 2133 MHz memory speed with unbuffered signal will run them smoothly
• Up to 2133 MHz speed with CL15 latency for playing the latest games and using heavy software
• 8 GB memory allows you to have more programs open at a time
• 8 GB of memory to heighten your computer's performance
• Allow convenient and fast access to the stored information your computer is actively using for maximum efficiency
• Enables efficient and smooth execution of all your heavy-duty applications with maximum productivity
• Unbuffered signal processing allows higher accuracy and enhanced ram module performance
• Unbuffered signal processing provides reliable optimization for your required applications to allow maximum usability
• 1 x 8GB modules for quick access and retrieval of data and information to ensure maximum usability
• CL15 CAS latency for faster, dependable clock cycles which allows quick access and retrieval of data and information
• CL15 CAS latency for quicker access to the required location in a timely efficient manner
• 288-pin for enhanced, dependable system performance with maximum usability
• 288-pin for optimal performance and maximum reliability
• DIMM form factor with 288-pin and 8 GB memory size effectively reduces minimizes the load on the server memory BUS to ensure maximum productivity
• 288-pin DDR4 SDRAM interface multiplexes 2-bit data from memory cell and I/O buses to minimize processor idle time and enhance your computer's performance
• 288-pin DDR4 SDRAM operates at an effective bus speed with minimal power consumption and as a result, you get optimal computer performance with an improved memory heat dissipation