Micron RAM Module - 8 GB (1 x 8GB) - DDR4-2400/PC4-19200 DDR4 SDRAM - 2400 MHz Dual-rank Memory - CL17 - 1.20 V - ECC - Registered - 288-pin - DIMM - MTA18ASF1G72PDZ-2G3

Product Description

Micron RAM Module - 8 GB (1 x 8GB) - DDR4-2400/PC4-19200 DDR4 SDRAM - 2400 MHz Dual-rank Memory - CL17 - 1.20 V - ECC - Registered - 288-pin - DIMM - MTA18ASF1G72PDZ-2G3

• Up to 2400 MHz speed for playing the latest games and using heavy software
• Up to 2400 MHz speed with registered signal for smooth computer performance
• DIMM 8 GB memory allows you to have more programs open at a time
• Allow convenient and fast access to the stored information your computer is actively using for maximum efficiency
• Enables efficient and smooth execution of all your heavy-duty applications with maximum productivity
• Registered signal processing provides increased processing power to allow maximum productivity
• Registered signal processing allows convenient and easy reconfiguration according to your requirements
• 1 x 8GB modules for quick access and retrieval of data and information to ensure maximum usability
• 1 x 8GB modules for enhanced memory reliability and productivity
• CL17 CAS latency for quicker access to the required location in a timely efficient manner
• CL17 CAS latency for reliable, fast response and improved performance
• 288-pin for faster, dependable performance and better access to data and information
• 288-pin for enhanced, dependable system performance with maximum usability
• DIMM form factor with 288-pin and 8 GB memory size effectively reduces minimizes the load on the server memory BUS to ensure maximum productivity
• DIMM form factor with 288-pin and 8 GB memory size effectively lessens the electrical load on the memory controller to allow maximum feasibility
• 288-pin DDR4-2400/PC4-19200 interface synchronizes electrical and clock signals for an efficient data transfer rate
• 288-pin DDR4-2400/PC4-19200 operates at an effective bus speed with minimal power consumption and as a result, you get optimal computer performance with an improved memory heat dissipation